Laser Produce Plasma for a EUV radiation source in Lithography Application – seminar

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Academic Centre for Materials and Nanotechnology invites for a special seminar that will be held on 25th June, 2018, at 9.30 am.

A lecture titled “Laser Produce Plasma for a EUV radiation source in Lithography Application” will be given by Katsunobu Nishihara (Institute of Laser Engineering, Osaka University).

Venue: Kawiory 30 Street, building D-16, auditorium room (1.02A)

An abstract of the lecture

Extreme ultraviolet (EUV) radiation from laser-produced plasma (LPP) has been thoroughly studied for application in mass production of next-generation semiconductor devices. IBM, working with Samsung and GlobalFoundries, has unveiled the world's first 5nm silicon chip in last year. Beyond the usual power, performance, and density improvement from moving to smaller transistors, the 5nm IBM chip is notable for being one of the first to use horizontal gate-all-around transistors, and the first real use of EUV lithography. I was involved in a LPP-EUV project from 2003 in Japan. One of the critical issues for the realization of an LPP-EUV light source for lithography was the conversion efficiency (CE) from incident laser power to EUV radiation of 13.5-nm wavelength (within 2% bandwidth). It was only about 0.1 % when I joined the project. Now the CE of 5-6 % is achieved in experiments. I would like to introduce how we solved the problems and proposed new schemes based on many different physics, such as atomic, material, plasma, radiation, EOS and so on.

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